• 专利标题:   Half-bridge power module, has semiconductor chip forming electric connection with conductive layer by path of insulation layer of substrate and forming electric connection with graphene conductive layer by path of insulation layer of module.
  • 专利号:   WO2018137556-A1, CN108346637-A
  • 发明人:   LI H, YANG S, LIAO W, YANG Q, LI Y, ZHANG J, ZENG Q
  • 专利权人:   BYD CO LTD, BYD CO LTD
  • 国际专利分类:   H01L023/31, H01L023/522, H01L023/538, H01L021/60, H01L023/498
  • 专利详细信息:   WO2018137556-A1 02 Aug 2018 H01L-023/538 201853 Pages: 23 Chinese
  • 申请详细信息:   WO2018137556-A1 WOCN073328 19 Jan 2018
  • 优先权号:   CN10063230

▎ 摘  要

NOVELTY - The module has an insulating medium substrate (10) i.e. printed circuit board, comprising a conductive layer (12) and an insulation layer (11) i.e. prepeg, arranged on the conductive layer. The insulation layer of the substrate is provided with a conductive path (14). An insulation layer (40) of the module is provided with a conductive path (42). A power semiconductor chip (20) is embedded between the insulation layer of the substrate and the insulation layer of the module. The power semiconductor chip forms an electric connection with the conductive layer by the conductive path of the insulation layer of the substrate and forms an electric connection with a graphene conductive layer (50) by the conductive path of the insulation layer of the module. USE - Half-bridge power module. ADVANTAGE - The module achieves packaging without opening a packaging mold, thus saving on production costs. The power semiconductor chip is provided with through holes in the insulation layer and filled with conductive material so as to realize an electric connection with the conductive layer, thus reducing volume of the module, and hence facilitating miniaturization of the module. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a power module. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a power module. Insulating medium substrate (10) Insulation layers (11, 40) Conductive layer (12) Conductive paths (14, 42) Power semiconductor chip (20) Graphene conductive layer (50)