▎ 摘　　要

NOVELTY - Making (200) a semiconductor device, comprises: providing (210) a graphene sheet; creating (220) many nanoholes in the graphene sheet to form a graphene nanomesh, where the graphene nanomesh includes many carbon atoms which are formed adjacent to the nanoholes; passivating (230) a dangling bond on the carbon atoms by bonding a passivating element to the carbon atoms; and doping (240) the passivated graphene nanomesh by bonding a dopant to the passivating element. USE - The method is useful for making a semiconductor device and doped, passivated graphene nanomesh which is useful in a FET (all claimed). ADVANTAGE - The method: utilizes the doped, passivated graphene nanomesh which provides ultra-stable doping of the graphene nanomesh; provides a solution that generates band gaps and provides stable rigid band doping in graphene; and inhibits a fluctuation of the dopant concentration. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a doped, passivated graphene nanomesh, comprising the graphene nanomesh containing many nanoholes formed in the graphene sheet and many carbon atoms, a passivating element bonded to the carbon atoms, and a dopant bonded to the passivating element. DESCRIPTION OF DRAWING(S) - The figure shows the method of making a semiconductor device. Making a semiconductor device (200) Providing a graphene sheet (210) Creating many nanoholes in the graphene sheet (220) Passivating a dangling bond on the carbon atoms (230) Doping the passivated graphene nanomesh (240)