▎ 摘　　要

NOVELTY - The transistor (GBT1) has a collector stack (120) comprising a collector-barrier layer (122), which is arranged immediately on a graphene base layer (118). The collector stack comprises an electrically conductive collector layer (124), which is arranged on the collector-barrier layer. The collector stack and the base layer are provided with same lateral extension along a direction that is parallel to a substrate surface and perpendicular to edges of a top surface of an emitter pillar (110) and a base-contact arm (116-2) that face each other. USE - Graphene base transistor e.g. graphene junction transistor and graphene hot electron or graphene hot-carrier transistor, for an electronic component (claimed) e.g. wafer and packaged system-on-chip, of a packaged electronic device. ADVANTAGE - The base layer is deposited on the surface with structural feature to provide good and immediate contact among the emitter, base layer and the base-contact arm for different alternative techniques of graphene deposition and eliminate a need to require processing to establish that contact is improved by performing additional process steps after collector barrier deposition. The transistor tunes transistor design for achieving a desired threshold voltage for entering an on state. The transistor provides openings in the base-contact arm layer to improve an electrical contact between the base-contact arm/arms and the base layer, thus reducing resistance of the base-contact structure. The transistor enables variation of lateral coverage to provide an additional degree of freedom to independently optimize collector-stack-to-emitter parasitic capacitance and base resistance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for fabricating a graphene base transistor (2) a method for fabricating an electronic component. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a processed semiconductor wafer illustrating a method for fabricating and forming a graphene base transistor. Graphene base transistor (GBT1) Emitter pillar (110) Base-contact arms (116-2, 116-3) Graphene base layer (118) Collector stack (120) Collector-barrier layer (122) Electrically conductive collector layer (124)