▎ 摘　　要

NOVELTY - The method involves forming a nickel thin film layer on a copper substrate. An N-type doped element and a P-type doped element are arranged on the nickel thin film layer. An N-type doped element-rich area and a P type doped element-rich area are formed. A heat preservation process is performed at methane environment. An N-type graphene and P-type doped graphene are formed respectively on the N-type doped element-rich area and the P-type doped element-rich zone. The P-type doped element is boron or sulfur. The N-type doped element is nitrogen and phosphorus or arsenic. USE - Doped graphene preparing method. ADVANTAGE - The method enables realizing better copper and nickel property and stable doped graphene structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene PN junction device preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a doped graphene preparing method. '(Drawing includes non-English language text)'