• 专利标题:   Method for preparing ultra-thin-flexible terahertz shielding material that is utilized for e.g. aircraft, involves growing graphene on surface of metal substrate followed by coating layer of transfer medium and depositing metal film.
  • 专利号:   CN110545654-A, CN110545654-B
  • 发明人:   HUANG Y, HOU S, MA W, LI G
  • 专利权人:   UNIV NANKAI
  • 国际专利分类:   H05K009/00
  • 专利详细信息:   CN110545654-A 06 Dec 2019 H05K-009/00 201999 Pages: 10 Chinese
  • 申请详细信息:   CN110545654-A CN10951799 09 Oct 2019
  • 优先权号:   CN10951799

▎ 摘  要

NOVELTY - An ultra-thin-flexible terahertz shielding material preparation method involves growing graphene on surface of metal substrate by performing chemical vapor deposition, coating a layer of transfer medium on surface of the metal substrate, removing material from the metal substrate using etching solution, obtaining graphene supported transfer medium, depositing metal film on polymer substrate, transferring the removed material on surface of the polymer substrate, removing the graphene supported transfer medium, repeating metal film deposition and transferring steps and obtaining layers of assembled metal-graphene composite. USE - Method for preparing ultra-thin-flexible terahertz shielding material that is utilized for aircraft, aerospace, flexible wearable electronics and portable electronic devices (claimed). ADVANTAGE - The method enables preparing highly efficient ultra-thin-flexible terahertz shielding material with 1-100 layers, preferably 1-4 layers, thickness of nm level, high stability and better flexibility. DETAILED DESCRIPTION - An ultra-thin-flexible terahertz shielding material preparation method involves growing graphene on surface of metal substrate by performing chemical vapor deposition, coating a layer of transfer medium on surface of the metal substrate, removing material from the metal substrate using etching solution, obtaining graphene supported transfer medium, depositing metal film on polymer substrate, transferring the removed material on surface of the polymer substrate, removing the graphene supported transfer medium, repeating metal film deposition and transferring steps and obtaining layers of assembled metal-graphene composite, where the method specifically involves cleaning 20-30 mu m copper foil, placing in 1000 degrees C tube furnace under protection of argon, passing hydrogen, annealing, passing methane, growing graphene, natural cooling in presence of argon and hydrogen, spin coating a layer of poly(methyl methacrylate) film on surface of graphene coated copper foil, removing copper using copper sulfate/hydrochloric acid etching solution (200 g/l copper sulfate and concentrated hydrochloric acid in a ratio of 1:1), obtaining graphene supported poly(methyl methacrylate) film, cleaning, depositing copper film on polyimide substrate by vacuum evaporation, transferring the graphene supported poly(methyl methacrylate) film on polyimide based copper film, drying, remove poly(methyl methacrylate) film using acetone, alternately repeating copper film deposition and graphene transferring steps and obtaining layered copper-graphene composite with thickness of 40-160 nm. An INDEPENDENT CLAIM is also included for an ultra-thin-flexible terahertz shielding material prepared by the method.