▎ 摘　　要

NOVELTY - The method involves forming a slit (235) in the graphene channel layer (230) on a substrate (210). The source electrode (271) and the drain electrode (272) are configured to apply voltages to the graphene channel layer. A gate electrode (273) is formed on the graphene channel layer. A gate insulation layer (250) is formed between the graphene channel layer and gate electrode. The slit is filled with a potential barrier material configured to induce Fowler-Nordheim (F-N) tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode. USE - Method for fabricating field effect transistor. ADVANTAGE - The high-performance field effect transistors which include graphene as channel layers and is capable of having a high ON/OFF ratio of operation currents. The ON/OFF ratios of operation currents of the field effect transistors are increased. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a field effect transistor including a graphene channel layer. Substrate (210) Graphene channel layer (230) Slit (235) Gate insulation layer (250) Source electrode (271) Drain electrode (272) Gate electrode (273)