• 专利标题:   Preparation method of graphene used in semiconductors involves graphite oxidation, mixing with metal powder and resin, diluting in acid, reacting, electrolytic decomposing, filtering, washing and adding polyethylene pyrrolidone.
  • 专利号:   CN105088261-A, CN105088261-B
  • 发明人:   FUGETSU B, JIANG D
  • 专利权人:   GUONENG NANO TECHNOLOGY CO LTD, GUONENG NANO TECHNOLOGY CO LTD
  • 国际专利分类:   C25B001/00
  • 专利详细信息:   CN105088261-A 25 Nov 2015 C25B-001/00 201629 Pages: 7 English
  • 申请详细信息:   CN105088261-A CN10203056 14 May 2014
  • 优先权号:   CN10203056

▎ 摘  要

NOVELTY - Preparation method of graphene comprises using concentrated sulfuric acid for graphite oxidation, mixing this with metal powder and resin, diluting in acid reaction mixture, pressing into resolve electrode using a platinum electrode, electrolytic decomposing the electrode until it disappears, filtering the solution, washing in water, adding polyethylene pyrrolidone and ultrasonic washing to obtain graphene. USE - Preparation method of graphene used in semiconductors. DESCRIPTION OF DRAWING(S) - The drawing is a flowchart of the preparation method of graphene (Drawing include non-English language text).