• 专利标题:   In situ preparation of electroless graphene thin film useful in flexible electronic device, comprises e.g. forming titanium catalyst layer by sputtering on substrate, and performing In-situ plasma assisted chemical vapor deposition.
  • 专利号:   KR1877500-B1
  • 发明人:   YOON S G, PARK B J
  • 专利权人:   UNIV IND ACADEMIC COOP IN CHUNGNAM NAT
  • 国际专利分类:   C01B032/182, C23C016/02, C23C016/26, C23C016/50
  • 专利详细信息:   KR1877500-B1 11 Jul 2018 C01B-032/182 201851 Pages: 17
  • 申请详细信息:   KR1877500-B1 KR068344 01 Jun 2017
  • 优先权号:   KR068344

▎ 摘  要

NOVELTY - In situ preparation of electroless graphene thin film, comprises (a) forming a titanium catalyst layer having thickness of 10-20 nm by sputtering on a substrate for synthetic resin material or a substrate for a transparent electrode, (b) performing In-situ plasma assisted chemical vapor deposition on the substrate in which the titanium catalyst layer is formed, in the same equipment as the sputtering equipment, and growing a graphene thin film in the substrate for the element or the transparent electrode is not deformed, at a temperature. USE - The film is useful to produce graphene-based electroless electroluminescent device (claimed) and flexible electronic device. ADVANTAGE - The method does not change transparency and electric characteristics of base substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for producing graphene-based electroless electroluminescent device, comprising (i) forming a titanium catalyst layer on the substrate for a device made of synthetic resin by sputtering process, and (ii) performing In-situ plasma assisted chemical vapor deposition on the substrate in which the titanium catalyst layer is formed, in the same equipment as the sputtering equipment, and growing a graphene thin film at a temperature in which the substrate for an element is not deformed.