• 专利标题:   Graphene film prepared by chemical vapor deposition having excellent purity, good mechanical properties, high flexibility and electrical conductivity.
  • 专利号:   CN108975320-A
  • 发明人:   GAO Y, GUAN W, YANG X
  • 专利权人:   UNIV XINYANG
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN108975320-A 11 Dec 2018 C01B-032/186 201908 Pages: 7 Chinese
  • 申请详细信息:   CN108975320-A CN11143776 29 Sep 2018
  • 优先权号:   CN11143776

▎ 摘  要

NOVELTY - Graphene film prepared by chemical vapor deposition (CVD) is claimed. USE - Used as graphene film. ADVANTAGE - The graphene film has excellent purity, good mechanical properties, high flexibility and electrical conductivity. The method is simple, economical, and fast. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing graphene film comprising (i) cleaning nickel foam, placing in tube furnace containing an argon-hydrogen mixed gas, and (ii) setting temperature, adjusting time, and adopting chemical vapor deposition to obtain grapheme film.