▎ 摘　　要

NOVELTY - The method involves forming and processing the n-type and p-type semiconductor layers (151,153) including a light emitting layer (152) on a layer containing graphene (140) on a first surface of a substrate (102). A light emitting element (150) including a light emitting surface is formed on the layer containing the graphene and an opposite side of the emitting surface. A first interlayer insulating film (156) covering the layer containing the graphene and the emitting element is formed. A transistor (103) is formed on the first film. A second interlayer insulating film (108) covering the first film and the transistor is formed. A first via (161a) that penetrates the first and second films is formed. A first wiring layer (110) is formed on the second film. The first layer is formed on the second film. The first via is provided between the first layer and the upper surface, and the first layer and the upper surface are electrically connected. USE - Method for manufacturing image display device (claimed). ADVANTAGE - The scattering of light in the sub-pixel is suppressed, and the stray light is more effectively suppressed by using the first interlayer insulating film as a black resin. The image display device in which stray light is suppressed displays a sharper image. The transfer process of a light emitting element is shortened and the yield is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an image display device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the color filter. 102Substrate 103Transistor 108Second interlayer insulating film 110First wiring layer 140Layer containing graphene 150Light emitting element 151N-type semiconductor layer 152Light emitting layer 153P-type semiconductor layer 156First interlayer insulating film 161aFirst via