▎ 摘　　要

NOVELTY - The method for the preparation of low cost uniform graphene thin film involves introducing a metal substrate into a chemical vapor deposition (CVD) reaction chamber, evacuating the CVD reaction chamber to a vacuum of 2 Pa, stopping pumping by introducing reducing gas at a flow rate of 10-50 standard cubic centimeters per minute (sccm), maintaining the chamber pressure, stopping the introduction of gas when the chamber pressure is 500-3000 Pa, maintaining the pressure within the chamber, heating the reaction chamber temperature at 900-1050 degrees C, and annealing the metal substrate. USE - Method is useful for the preparation of low cost uniform graphene thin film (claimed). ADVANTAGE - The method enables the preparation of uniform graphene thin film with rapid growth rate, high stability and quality and increased sheet resistance in an economical manner. DETAILED DESCRIPTION - The method for the preparation of low cost uniform graphene thin film involves introducing a metal substrate into a chemical vapor deposition (CVD) reaction chamber, evacuating the CVD reaction chamber to a vacuum of 2 Pa, stopping pumping by introducing reducing gas at a flow rate of 10-50 standard cubic centimeters per minute (sccm), maintaining the chamber pressure, stopping the introduction of gas when the chamber pressure is 500-3000 Pa, maintaining the pressure within the chamber, heating the reaction chamber temperature at 900-1050 degrees C, annealing the metal substrate for more than 30 minutes, evacuating the reaction chamber to a vacuum of 2 Pa, stopping evacuation, introducing methane, ethylene carbon source gas, gas flow rate of 2-10 sccm, a hydrogen flow rate of 10-100 sccm when the chamber pressure is 50-500 Pa, stopping the introduction of gas, cracking the reaction gas at a high temperature, carrying out graphene nucleation on the metal surface for 5-10 minutes, growing graphene film, evacuating the reaction chamber to a vacuum of 2 Pa, stopping pumping, introducing argon or inert gas such as nitrogen at a flow rate of 20 sccm and a reaction chamber pressure of 500-7000 Pa, stopping introducing the gas, cooling the substrate and the graphene to complete the preparation of the graphene film.