• 专利标题:   Method for forming graphite-based structure on substrate, involves generating first and second graphene layers on entire first surface of element and entire second surface of trench, respectively, where graphene layers has graphene sheets.
  • 专利号:   US2015349061-A1
  • 发明人:   DAVIS M A
  • 专利权人:   SOLAN LLC
  • 国际专利分类:   H01L021/02, H01L029/16
  • 专利详细信息:   US2015349061-A1 03 Dec 2015 H01L-029/16 201601 Pages: 38 English
  • 申请详细信息:   US2015349061-A1 US14654776 22 Jun 2015
  • 优先权号:   US910026, US14654776

▎ 摘  要

NOVELTY - The method involves patterning a substrate (102) to form a set of elements (104-3) on a surface (202) of the substrate. First and second graphene layers (302-3) are generated on entire first surface (204-3) of the element and entire second surface of a trench, respectively, where the second graphene layer has thickness that is less than difference in first elevation and second elevation for creating a graphite-based structure in which the second graphene layer is isolated from the first graphene layer, and the first and second graphene layers comprise graphene sheets. USE - Method for forming a graphite-based structure on a substrate. Uses include but are not limited to graphene quantum dots, graphene nanoribbons, graphene nanonetworks, graphene plasmonics and graphene super-lattices. ADVANTAGE - The method enables reducing or eliminating loss of surface areas occurring during isolation of graphene layers after graphene generation, thus improving functionalities or efficiency of the generated graphite structures or devices. The method enables reducing standing waves, thin-film interference and specular reflections, thus improving pattern resolution, while rendering an image accurately without any visible distortion or information loss. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view illustrating a topography of a graphene device. Substrate (102) Elements (104-3) Surface of substrate (202) Surface of element (204-3) Graphene layer (302-3)