• 专利标题:   Transistor used in electronic device, comprises source electrode, drain electrode, non-coplanar graphene connected to source and drain electrodes, insulating material layer, piezoelectric material and voltage regulating circuit.
  • 专利号:   KR2016084775-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04, H01L041/18, H01L041/22
  • 专利详细信息:   KR2016084775-A 14 Jul 2016 H01L-041/18 201663 Pages: 221
  • 申请详细信息:   KR2016084775-A KR001452 06 Jan 2015
  • 优先权号:   KR001452

▎ 摘  要

NOVELTY - A transistor comprises a source electrode, a drain electrode, a non-coplanar graphene connected to the source electrode and the drain electrode, an insulating material layer provided on the lower portion of graphene, piezoelectric material provided on etched layer of insulation material, and a voltage regulating circuit. One or more piezoelectric material provided in lower portion of graphene and voltage regulating circuit control on/off of electricity. The Fermi level between the graphene and the drain electrode controls on/off of electricity. USE - Transistor e.g. graphene single electron transistor and electron tunneling graphene transistor used in electronic device (all claimed) for controlling on/off of electricity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) electronic device, which comprises one-dimensionally, two-dimensionally or three-dimensionally arranged transistor(s); (2) graphene single-electron transistor; and (3) electron tunneling graphene transistor.