• 专利标题:   Method for manufacturing pellicle, involves forming oxide layer over supporting substrate, forming metal layer over oxide layer, forming graphene layer over metal layer, and removing portion of supporting substrate and oxide layer.
  • 专利号:   US2017205705-A1, CN106997847-A, TW201734631-A, US9864270-B2
  • 发明人:   MA J, WU T, YANG C, CHERN C S, LIN C, LIN Y, MA Z, WU X, YANG Q, CHEN Q, LIN Z, CHERN C
  • 专利权人:   TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD
  • 国际专利分类:   G03F001/64, H01L021/033, G03F001/62
  • 专利详细信息:   US2017205705-A1 20 Jul 2017 G03F-001/64 201750 Pages: 19 English
  • 申请详细信息:   US2017205705-A1 US996966 15 Jan 2016
  • 优先权号:   US996966

▎ 摘  要

NOVELTY - The method involves providing a supporting substrate (102). An oxide layer is formed over the supporting substrate. A metal layer is formed over the oxide layer. A graphene layer is formed over the metal layer. A portion of the supporting substrate and the oxide layer is removed. A silicon carbide (SiC) layer is formed over the graphene layer. A diamond layer is formed over the graphene layer. A pellicle frame is attached to a peripheral portion of the supporting substrate. USE - Method for manufacturing a pellicle. ADVANTAGE - The method enables performing manufacturing process at sub-atmospheric pressures to reduce unwanted gas phase interactions and improve uniformity of a film across the support substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a pellicle. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a pellicle fabricated at various stages. Supporting substrate (102)