▎ 摘　　要

NOVELTY - The light emitting device (1) has a semiconductor layer that is arranged on a nano-structure (19). An active layer (27) is arranged on the semiconductor layer. A conductive semiconductor layer (29) is arranged on the active layer. A graphene layer (13) of the nano-structure is arranged under the semiconductor layer. A nano-texture (16) is extended from a top surface of the graphene layer in a direction toward the semiconductor layer and contacted with the semiconductor layer. The nano-texture is comprised of zinc oxide (ZnO). USE - Lateral-type semiconductor light emitting device for lightning device such as lamp e.g. streetlamp, LCD, electronic display used in indoor and outdoor places. ADVANTAGE - Since the nano-texture is extended from the top surface of the graphene layer in the direction toward the semiconductor layer and contacted with the semiconductor layer, the light emitting device is capable of improving light emission efficiency through current spreading, and capable of improving electrical and optical characteristics. Thus, the low power consumption, the long lifetime, the fast response time, safety and environment-friendliness can be achieved effectively in light emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the lateral-type light emitting device. Light emitting device (1) Graphene layer (13) Nano-texture (16) Nano-structure (19) Active layer (27) Conductive semiconductor layer (29)