▎ 摘　　要

NOVELTY - The formation method involves forming a metal catalyst layer (130) on a reaction barrier layer (120) disposed on a substrate layer (110). A board (100) comprising of a stack of layers is subjected to high pressure annealing in vacuum atmosphere or inert gas atmosphere. A graphene layer is grown on the metal catalyst layer. USE - Formation method of graphene layer. ADVANTAGE - Superior surface flatness of metal thin film is maintained through high pressure annealing irrespective of high temperature process for growing a graphene layer. Surface flatness of metal catalyst layer is improved through high pressure annealing, while reducing formation of wrinkles on the graphene layer. Migration of metal catalyst atoms is suppressed by forming reaction barrier layer using a material having high adhesion energy to metal catalyst layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a board for forming graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of the board. Board (100) Substrate layer (110) Reaction barrier layer (120) Metal catalyst layer (130)