• 专利标题:   Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.
  • 专利号:   US2014299975-A1, KR2014121137-A, US9129811-B2, KR2015132816-A, KR1687313-B1
  • 发明人:   CHO B J, MUN J H
  • 专利权人:   KOREA ADVANCED INST SCI TECHNOLOGY, KOREA ADVANCED INST SCI TECHNOLOGY
  • 国际专利分类:   H01L021/02, H01L029/16, C23C016/02, C23C016/44, C23C028/00, H01L021/20, H01L045/00, C23C016/32, C23C016/455
  • 专利详细信息:   US2014299975-A1 09 Oct 2014 H01L-021/02 201470 Pages: 12 English
  • 申请详细信息:   US2014299975-A1 US132071 18 Dec 2013
  • 优先权号:   KR037436, KR155949

▎ 摘  要

NOVELTY - The formation method involves forming a metal catalyst layer (130) on a reaction barrier layer (120) disposed on a substrate layer (110). A board (100) comprising of a stack of layers is subjected to high pressure annealing in vacuum atmosphere or inert gas atmosphere. A graphene layer is grown on the metal catalyst layer. USE - Formation method of graphene layer. ADVANTAGE - Superior surface flatness of metal thin film is maintained through high pressure annealing irrespective of high temperature process for growing a graphene layer. Surface flatness of metal catalyst layer is improved through high pressure annealing, while reducing formation of wrinkles on the graphene layer. Migration of metal catalyst atoms is suppressed by forming reaction barrier layer using a material having high adhesion energy to metal catalyst layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a board for forming graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of the board. Board (100) Substrate layer (110) Reaction barrier layer (120) Metal catalyst layer (130)