▎ 摘　　要

NOVELTY - Interconnect structure (100) comprises a first dielectric layer (120) including a trench (120a), a conductive wire (140) filling an inside of the trench, a first cap layer (150) on a top surface of the conductive wire, the first cap layer including a doped graphene, the doped graphene being graphene doped with a group (V) element, and a second dielectric layer on a top surface of first cap layer. USE - Interconnect structure for electronic device (claimed). ADVANTAGE - The interconnect structure may form the cap layer formed in the conductive wire with the doped graphene, thus reducing the resistance of the conductive wire and improves adhesion to a subsequent deposition material layer formed on the cap layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of interconnect structure. 100Interconnect structure 120First dielectric layer 120aTrench 140Conductive wire 150First cap layer