▎ 摘　　要

NOVELTY - The method involves arranging a metal carbon nanometer tube and a semi-conductive carbon nanometer tube on a substrate, where the substrate is made of silicon/silicon dioxide, quartz, gallium arsenide or plastic material. A medium material layer is deposited on the carbon nanometer tube. Graphene is transferred to the carbon nanometer tube. Electrodes are led at two ends of the carbon nanometer tube by using conductive material. The conductive material is deposited at two ends of the graphene for forming an electrode. USE - Carbon-based nanometer material transistor preparing method. ADVANTAGE - The method enables preparing a carbon-based nanometer material transistor with two types of structure, and enables the semi-conductive carbon nanometer tube to be utilized as a channel when the graphene is utilized as a gate electrode and the metal carbon nanometer tube is utilized as the gate electrode if the graphene is utilized as the channel. DESCRIPTION OF DRAWING(S) - The drawing shows a photographic view of a carbon-based nanometer material transistor.