▎ 摘　　要

NOVELTY - The spin valve device comprises a lower magnetic layer (LM1), a graphene sheet (60) on the lower magnetic layer, an upper magnetic layer (UM1) on the graphene sheet, and a spacer between the lower magnetic layer and the graphene sheet and between the graphene sheet and the upper magnetic layer. The graphene sheet has a single layer structure or a multilayer structure. USE - The spin valve device such as a storage node is useful in a magnetic memory device and a spin transfer nano-oscillator (all claimed), where the spin valve device is a giant magnetoresistive device. ADVANTAGE - The spin valve device has high efficiency, increases a magnetic resistance of the magnetic memory device and maintains an electrical resistance of the memory device at a relatively low level, and prevents or reduces undesired hybridization with carbons in graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a spin valve device. DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional view of a spin valve device. Seed layer (30) Pinning layer (40) Pinned layer (50) Sheet (60) Lower magnetic layer (LM1) Upper magnetic layer. (UM1)