▎ 摘　　要

NOVELTY - The switch has an insulation substrate (1) formed with a zinc selenide nano belt (2). An end of the zinc selenide nano belt is mounted with a gold electrode (3). Another end of the zinc selenide nano belt is mounted with a graphene thin film i.e. intrinsic graphene thin film (4) that is arranged with a six-angle point array arrangement (5). The gold electrode is connected with a leading-out electrode (6). Thickness of a silicon dioxide layer is 300nm. Thickness of the gold electrode is 15-30nm. A diameter of a polystyrene microsphere is 300-900nm. USE - Indium nano particle array embellished graphene/zinc selenide nano belt Schottky junction blue light photoelectric switch. ADVANTAGE - The switch increases light response degree. The switch is simple in structure. The switch has quick response speed. The switch has high photoelectric switch light with anti-electromagnetic interference. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an indium nano particle array embellished graphene/zinc selenide nano belt Schottky junction blue light photoelectric switch preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a top perspective view of a/an indium nano particle array embellished graphene/zinc selenide nano belt schottky junction blue light photoelectric switch. Insulation substrate (1) Zinc selenide nano belt (2) Gold electrode (3) Intrinsic graphene thin film (4) Six-angle point array arrangement (5) Leading-out electrode (6)