▎ 摘　　要

NOVELTY - The silicon-graphene avalanche photoelectric detector has a lateral cladding area that is located in two sides of a silicon core area (14). Two sides of lateral cladding area are set up with one graphene strip (6). Two sides of graphite strip are extended at intervals of graphene thin fork (2) towards center direction. A metal positive electrode (4) is set in the graphite alkene and the fork of graphene strip. A metal negative electrode (5) is set in the graphite alkene and graphene width fork (3) of graphene strip. USE - Silicon-graphene avalanche photoelectric detector. ADVANTAGE - The structure of the photoelectric detector is simplified. The design of the photoelectric detector is convenient. The manufacturing cost of the photoelectric detector is significantly reduced. The noise of the photoelectric detector is reduced. The device packaging cost is reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the silicon-graphene avalanche photoelectric detector. Graphene thin fork (2) Graphene width fork (3) Metal positive electrode (4) Metal negative electrode (5) Graphene strip (6) Silicon core area (14)