• 专利标题:   Graphene manufacturing method by which high quality and large-area of continuous graphene layer can be directly generated on metal or nonmetal substrate.
  • 专利号:   TW201600459-A, TW570061-B1
  • 发明人:   HU C, HU C L
  • 专利权人:   H HT CO LTD, HU C, HU C L
  • 国际专利分类:   C01B031/04, C23C014/06, C23C014/58
  • 专利详细信息:   TW201600459-A 01 Jan 2016 C01B-031/04 201645 Pages: 0 Chinese
  • 申请详细信息:   TW201600459-A TW121282 19 Jun 2014
  • 优先权号:   TW121282

▎ 摘  要

NOVELTY - A graphene manufacturing method includes: selecting a substrate; sputtering or depositing at least a mixed layer, which is constructed of a carbon material mixed with metal material, on the top of the substrate; subjecting the said substrate and mixed layer to an annealing treatment; after the annealing treatment, the metal material in the mixed layer will be deposited downwardly to form a metallic layer, while the carbon material in the mixed layer will precipitate to form a grapheme layer. Alternatively, the method includes: selecting a substrate; sputtering or depositing at least a carbon material layer on top of the substrate; subjecting the said substrate and carbon material layer to an annealing treatment; after the annealing treatment, the carbon material layer will precipitate to form a grapheme layer. By the above manufacturing method, high quality and large-area of continuous graphene layer can be directly generated on the metal substrate or nonmetal substrate.