• 专利标题:   Preparation of nitrogen-doped graphene involves providing growth substrate and nitrogen-carbon solid source, heating growth substrate and nitrogen-carbon solid source and depositing crystal on surface of growth substrate.
  • 专利号:   CN109019571-A
  • 发明人:   FANG X, WAN J, YOU Y, XU Y, CHEN X
  • 专利权人:   SHANGHAI ADVANCED RES INST CHINESE ACAD
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN109019571-A 18 Dec 2018 C01B-032/186 201919 Pages: 12 Chinese
  • 申请详细信息:   CN109019571-A CN10436464 12 Jun 2017
  • 优先权号:   CN10436464

▎ 摘  要

NOVELTY - The preparation method of nitrogen-doped graphene involves providing growth substrate and nitrogen-carbon solid source, heating growth substrate under reducing atmosphere and then processing, heating nitrogen-carbon solid source under reducing atmosphere and depositing crystal on the surface of the growth substrate. USE - The method is useful for preparation of nitrogen-doped graphene. ADVANTAGE - The method enables simple, easy, safe and economical preparation of nitrogen-doped graphene with controllable layer number.