• 专利标题:   Charge-transfer controlled two-dimensional device includes two-dimensional active conducting material, two-dimensional charge transfer source material, and at least one overlapping portion, and two-dimensional active conducting material overlaps two-dimensional charge transfer source material.
  • 专利号:   US2023011913-A1
  • 发明人:   WANG Y, BURCH K S, BALGLEY J, HENRIKSEN E
  • 专利权人:   BOSTON COLLEGE, UNIV WASHINGTON ST LOUIS
  • 国际专利分类:   H01L029/20, H01L029/205, H01L029/417, H01L029/66, H01L029/778
  • 专利详细信息:   US2023011913-A1 12 Jan 2023 H01L-029/778 202307 English
  • 申请详细信息:   US2023011913-A1 US811934 12 Jul 2022
  • 优先权号:   US203191P, US811934

▎ 摘  要

NOVELTY - Charge-transfer controlled two-dimensional (2D) device includes a 2D active conducting material, a 2D charge transfer source material, and at least one overlapping portion. The 2D active conducting material overlaps the 2D charge transfer source material including at least one edge of the 2D charge transfer source material. USE - Charge-transfer controlled two-dimensional (2D) device. ADVANTAGE - The charge-transfer controlled two-dimensional (2D) device gains control of the flow of electrical current through atomically thin materials for applications including but not limited to photovoltaics and computing. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for controlling charge transfer in 2D materials, which involves providing a 2D active conducting material, providing a 2D charge transfer source material, and positioning the 2D active conducting material to overlap one portion of the 2D charge transfer source material including at least one edge of the 2D charge transfer source material.