▎ 摘　　要

NOVELTY - The multilayer structure (M100) has a first material layer (L10), a second material layer (L20) connected to the first material layer, the second material layer being spaced apart from the first material layer, and a diffusion barrier layer (B10) between the first material layer and the second material layer. The diffusion barrier layer includes a non-graphene-based 2D material. The 2D material includes a metal chalcogenide-based material having the 2D crystal structure. USE - Multilayer structure for electronic device (claimed) such as integrated circuits (ICs). ADVANTAGE - The diffusion barrier layers including the material may have a small thicknesses and maintain excellent characteristics while having a small thicknesses i.e., may serve to increase stability, reliability, and durability of the device without increasing a resistance of the high-integration device (ultra-high-integration device). High-integration device having excellent characteristics may be easily implemented by using the diffusion barrier layers. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a multilayer structure including a diffusion barrier layer. Diffusion barrier layer (B10) First material layer (L10) Second material layer (L20) Multilayer structure (M100)