• 专利标题:   Preparation of graphite paper by depositing nickel catalyst, annealing, performing chemical vapor deposition of graphene film, soaking in iron compound solution, drying, growing carbon nanotube by chemical vapor deposition, and pressing.
  • 专利号:   CN103626172-A, CN103626172-B
  • 发明人:   ZHANG Y, CAO D, ZHAO Z, HE Z, LUAN H
  • 专利权人:   SHANGHAI LIWUSHENG ENTERPRISE GROUP CO
  • 国际专利分类:   B82Y030/00, C01B031/04
  • 专利详细信息:   CN103626172-A 12 Mar 2014 C01B-031/04 201429 Pages: 5 Chinese
  • 申请详细信息:   CN103626172-A CN10628887 29 Nov 2013
  • 优先权号:   CN10628887

▎ 摘  要

NOVELTY - A graphite paper is prepared by depositing nickel catalyst by magnetron sputtering, annealing at 750-950 degrees C in argon-hydrogen atmosphere, charging acetylene or methane at flow rate of 20-70 cm3/minute, and performing chemical vapor deposition of graphene film at 500-1000 degrees C for 0.5-5 hours; soaking in 0.05-0.6 mol/L aqueous iron compound solution for 2 hours, and drying at 120 degrees C; and charging acetylene or methane at flow rate of 20-80 cm3/minute, growing carbon nanotube by chemical vapor deposition at 500-650 degrees C for 0.5-2 hours, and pressing under pressure of 1000-2000 N/cm2. USE - Method for preparing graphite paper (claimed). ADVANTAGE - The graphite paper has high thermal conductivity. DETAILED DESCRIPTION - A graphite paper is prepared by: (A) depositing nickel catalyst by magnetron sputtering at air pressure of 0.3-1 Pa, argon gas flow rate of 5-30 cm3/minute and transmission power of 80-300 W, annealing at 750-950 degrees C in argon-hydrogen atmosphere, charging acetylene or methane at flow rate of 20-70 cm3/minute, and performing chemical vapor deposition of graphene film at 500-1000 degrees C for 0.5-5 hours under pressure of 5-20 kPa and hydrogen flow rate of 100-200 cm3/minute; (B) soaking in 0.05-0.6 mol/L aqueous solution of ferric nitrate, ferric chloride or ferric acetate for 2 hours, and drying at 120 degrees C; and (C) charging acetylene or methane at flow rate of 20-80 cm3/minute, growing carbon nanotube by chemical vapor deposition at 500-650 degrees C for 0.5-2 hours under pressure of 5-25 kPa with hydrogen flow rate of 100-250 cm3/minute, and pressing under pressure of 1000-2000 N/cm2.