1. 平台首页
  2. 国际专利信息
  • 专利标题:   Synthesis of graphene involves preparing dielectric substrate, mounting electric furnace on substrate, increasing reaction temperature, and injecting carbon precursor on substrate.
  • 专利号:   KR2012108232-A, KR1250924-B1
  • 发明人:   SON M H, SONG H J, CHOI H C
  • 专利权人:   POSTECH ACADIND FOUND
  • 国际专利分类:   C01B031/02, C23C016/26, C23C016/448
  • 专利详细信息:   KR2012108232-A 05 Oct 2012 C01B-031/02 201311 Pages: 13
  • 申请详细信息:   KR2012108232-A KR025883 23 Mar 2011
  • 优先权号:   KR025883

▎ 摘　　要

NOVELTY - A dielectric substrate is prepared, electric furnace is mounted on the substrate, reaction temperature is increased by increasing the temperature of electric furnace, and carbon precursor is injected on substrate and thermally decomposed by chemical vapor deposition method to obtain graphene. USE - Synthesis of graphene.