▎ 摘　　要

NOVELTY - The detector has a detector main housing which includes a silicon material (1), a silicon dioxide layer (2) and a germanium layer (3). A metal electrode (4) is formed as a Schottky contact. The substrate covers the germanium layer. A graphene film (5) is provided on the metal electrode, where the germanium layer is a periodic array of air holes, and the metal electrode is a gold (Au) electrode and forms Schottky contact with Ge and the graphene film is a single-layer graphene. USE - Silicon-based germanium detector. ADVANTAGE - The detector realizes ultra-high absorption at 1310nm incident light through photonic crystal structure design, improves quantum efficiency, simplifies process cost and manufacturing cost, and has better market application prospect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing silicon-based germanium detector. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the silicon-based germanium detector. Silicon material (1) Silicon dioxide layer (2) Germanium layer (3) Metal electrode (4) Graphene film (5)