▎ 摘　　要

NOVELTY - This utility model claims a flexible Schottky solar energy battery based on graphene and n-type II-VI semiconductor nanometer line array. It comprises a layer of flexible substrate, on a flexible substrate provided with graphene, on the graphene layer growing with n-type II-VI group semiconductor nanometer line vertical array structure, graphite layer and n-type II-VI group semiconductor nanometer wire array forming Schottky junction, in the n-type II-VI group semiconductor nanometer wire array gap provided with PMMA (PolymethylMethacrylate, polymethacrylic acid methyl ester) insulation layer, n-type II-VI group semiconductor nanometer wire array head exposed outside of PMMA insulation layer, on PMMA insulation layer provided with net-like metal aluminum electrode; on the graphene exposed one side provided with gold/titanium electrode. This utility model uses n-type II-VI group semiconductor nanometer wire array and graphene constructed Schottky structure, increasing absorption and conversion of device to photon, improving the conversion efficiency of the solar energy battery, and realizing high ductility and high integrated degree of flexible solar energy battery, can be used for high efficient flexible photovoltaic power generating device.