▎ 摘　　要

NOVELTY - The structure has a FET provided with a conductive channel (1), a source region (2), a drain region (3) and a gate oxide layer (4), where the conduction channel, the source region and the drain region are made of intrinsic semiconductor graphene nanometer belt. A source electrode (S) and drain (D) are provided with a conductive metal. USE - FET integrated heterogeneous material graphite nano-gate structure. ADVANTAGE - The structure improves performance, and reduces leakage of current, and inhibits drain induced barrier effect. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a FET integrated heterogeneous material graphite nano-gate structure. Drain (D) Source electrode (S) Conductive channel (1) Source region (2) Drain region (3) Gate oxide layer (4)