▎ 摘　　要

NOVELTY - The manufacturing method involves depositing a fullerene molecule on the active layer (13) formed through the insulating layer (12) on the board (11). The active layer and fullerene molecule is heated and carbonized material layer (15) is formed. The carbonized material layer is heated at temperature of 850 to 1100 degree Celsius. USE - Manufacturing method of graphene sheet used for manufacturing of semiconductor device (claimed). ADVANTAGE - Enables forming of the graphene sheet by which the number of layers is controlled on a board with an insulating film. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the deposition process of a fullerene molecule, formation process of a carbonized material layer and the formation process of graphene sheet. (Drawing includes non-English language text). Board (11) Insulating layer (12) Active layer (13) Carbonized material layer (15) Graphene sheet (16)