• 专利标题:   Transferring graphene on target substrate e.g. quartz by taking higher melting point metal as metal substrate, pretreating, heating lower melting point metal or alloy, bonding with metal substrate and growing graphene on metal substrate.
  • 专利号:   CN106276863-A, CN106276863-B
  • 发明人:   FU L, LU W, WANG J, ZENG M, SHAO M
  • 专利权人:   UNIV WUHAN, UNIV WUHAN
  • 国际专利分类:   C01B031/04, C01B032/194
  • 专利详细信息:   CN106276863-A 04 Jan 2017 C01B-031/04 201720 Pages: 12 Chinese
  • 申请详细信息:   CN106276863-A CN10238312 12 May 2015
  • 优先权号:   CN10238312

▎ 摘  要

NOVELTY - Transferring graphene comprises taking higher melting point metal as metal substrate, pretreating, heating lower melting point metal or alloy, bonding the lower melting point metal or alloy with metal substrate, growing graphene on lower melting point metal or alloy on the metal substrate, obtaining metal substrate with graphene growth, placing on heating table, heating at a temperature above the lower melting point metal or alloy melting point temperature, and transferring graphene on target substrate by sliding graphene on target substrate. USE - Transferring graphene on target substrate i.e. silicon sheet, quartz, plastic film, mica, hafnium oxide or beryllium oxide, where plastic film is polyethylene terephthalate film (all claimed). ADVANTAGE - The method is faster and suitable for industrial production, provides cleaner graphene after the transfer, has simple conditions, and uses metal substrate, which can be repeatedly used.