• 专利标题:   Method for manufacturing electrode of power storage device in electric device, involves reducing graphene oxide by heat treatment in atmosphere containing nitrogen such that graphene doped with nitrogen is formed on particle.
  • 专利号:   US2016104885-A1, US9653728-B2
  • 发明人:   HIROHASHI T, OGUNI T
  • 专利权人:   SEMICONDUCTOR ENERGY LAB
  • 国际专利分类:   H01M010/0525, H01M004/38, H01M004/583, B82Y030/00, B82Y040/00, H01G011/32, H01M004/587
  • 专利详细信息:   US2016104885-A1 14 Apr 2016 H01M-004/38 201628 Pages: 11 English
  • 申请详细信息:   US2016104885-A1 US969949 15 Dec 2015
  • 优先权号:   JP140743

▎ 摘  要

NOVELTY - The method involves forming graphene oxide on particle. The graphene oxide is reduced by heat treatment in an atmosphere containing nitrogen such that a graphene doped with nitrogen is formed on the particle, where the graphene comprises a hole formed inside a ring-like structure formed by carbon and nitrogen, and nitrogen concentration in the graphene is higher than or equal to 0.4 percent and lower than or equal to 40 percent. Mixture containing the graphene oxide and the particle is formed, where the hole is in form of a ring. USE - Method for manufacturing an electrode of a power storage device in an electric device. Uses include but are not limited to a desktop personal computer or laptop personal computer, an image reproduction device, a DVD, a mobile phone, an air conditioner, a portable game machine, a portable information terminal, an e-book reader, a video camera and a digital still camera. ADVANTAGE - The method enables improving charging and discharging characteristics of the power storage device. The method enables utilizing an electric device that has high reliability and can withstand long-term. The method enables reducing usage rate of electric power in time period when the electric device is used. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene.