▎ 摘　　要

NOVELTY - Graphene is grown by (1) providing a substrate; (2) forming a single crystal metal silicide layer on the substrate; and (3) growing graphene layer on metal silicide layer using chemical vapor deposition method. USE - Method for growing graphene (claimed). ADVANTAGE - The method can form metal silicide layer which can withstand a high temperature environment for a long time, can adapt in graphene growing process, and at the same time, does not cause metal pollution problem after growing graphene, and can facilitate convenient transfer and further application of graphene. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (A) a graphene layer obtained after peeling the grown graphene layer; and (B) a semiconductor device formed on the graphene layer.