▎ 摘　　要

NOVELTY - The LED has a graphene layer located on a sapphire substrate. An LED unit is located on the graphene layer. The LED unit comprises an aluminum nitride layer that is formed on the Graphene layer. An aluminum nitride/Aluminum gallium nitride ultra-lattice is formed on the aluminum nitride layer. An n-AlxGa1-xN layer is located on the aluminum nitride/Aluminum gallium nitride ultra-lattice. A multi-quantum well active layer is formed on the n-AlxGa1-xN layer. An aluminum gallium nitride layer is formed in the multi-quantum well active layer. Thickness of the aluminum nitride layer is about 0.5 to 2 microns. Periodicity of the aluminum nitride/Aluminum gallium nitride is about 5-30. Thickness of the n-AlxGa1-xN layer is about 0.5 to 5 microns. USE - Graphene UV LED. ADVANTAGE - The LED reduces production cost, and has better graphene conductivity, stress releasing effect and van der Waals epitaxial growth of film deposition process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a Graphene UV LED preparing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a graphene UV LED.