▎ 摘　　要

NOVELTY - The self-driven pressure strain sensor has a transistor layer (100) is provided with substrate (101). A common gate layer (1023), source electrode (1022), and drain electrode (1021) are formed on the substrate. The source and drain are connected through a channel. The gate is connected to the channel through an ionic gel layer (103). The transistor layer includes a piezoelectric nanogenerator (104). One of the electrodes of the piezoelectric nano-generator is the grid. The cover layer (200) includes a graphene layer (201). The cover layer is configured to cover the transistor layer and to cover the channel with the graphene layer. USE - Self-driven pressure strain sensor used in electronic skin (claimed). ADVANTAGE - The strain sensor is localized and systematic. The pressure sensing and strain sensing are integrated, and both can be monitored in real time, thus, saving resources. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing self-driven pressure strain sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a top view of the self-driven pressure strain sensor. (Drawing includes non-English language text) Transistor layer (100) Substrate (101) Ionic gel layer (103) Piezoelectric nanogenerator (104) Cover layer (200) Graphene layer (201) Drain electrode (1021) Source electrode (1022) Common gate layer (1023)