▎ 摘　　要

NOVELTY - The semiconductor package (100) comprises a reduced graphene oxide layer that is formed as an electric wave shielding layer. A plating layer is formed after the reduction of the graphene oxide. The graphene oxide is manufactured by tin chloride, Sodium Phosphate, sodium borohydride, hydroiodic acid, hydrazine, Ascorbic acid, urea, urea, amino acid, gallic acid, pyrrole, thiophene or aniline compound, where amine compound is a polyamine. The amine compound is a polymer having a quaternary ammonium functional group. The semiconductor package is subjected to the silver nitrate solution treatment. USE - Semiconductor package. ADVANTAGE - The need for palladium, which is an expensive rare metal, is eliminated by using alternative of graphene oxide, and also the electromagnetic wave shielding property is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor package that includes providing a surface of a semiconductor package molded with an epoxy molding compound. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a semiconductor package. Semiconductor package (100) Soldering terminals (101b) Ground terminal (101c) Semiconductor die (103)