• 专利标题:   Manufacture of graphene structure used for electronic devices, such as field effect transistor of high mobility involves forming carbon and insulation film layer on base material and forming catalyst metal layer on insulation film layer.
  • 专利号:   JP2013256408-A
  • 发明人:   EGAWA T, FUJITA K
  • 专利权人:   UNIV NAGOYA
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   JP2013256408-A 26 Dec 2013 C01B-031/02 201402 Pages: 7 Japanese
  • 申请详细信息:   JP2013256408-A JP133613 13 Jun 2012
  • 优先权号:   JP133613

▎ 摘  要

NOVELTY - A graphene structure (1) is manufactured by forming carbon by decomposition reaction of carbon compound on base material (2), forming insulation film layer (3) on base material, forming catalyst metal layer (4) on insulation film layer, supplying catalyst metal layer, forming graphite layer (5), dissolving graphite with active substance in catalyst metal, spreading and precipitating to interface with insulating film by heat-processing, and forming a uniform graphene film on insulating film by removing catalyst metal layer. USE - Manufacture of graphene structure used for electronic devices, such as field effect transistor (FET) of high mobility. ADVANTAGE - Graphene structure which has uniform graphene film on insulating film is manufactured simply. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the manufacturing process of graphene structure and graphene film. (Drawing includes non-English language text). Graphene structure (1) Base material (2) Insulation film layer (3) Catalyst metal layer (4) Graphite layer (5) Graphene layer (6)