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  • 专利标题:   Preparing insulating substrate in situ on graphene doped thin film transparent electrode, involves pretreating insulating substrate through metal plating process, where insulating substrate is coated with metal catalyst.
  • 专利号:   CN104532206-A
  • 发明人:   GAO X, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D
  • 专利权人:   CHONGQING MOXI TECHNOLOGY CO LTD, CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   C23C016/26, C23C016/44
  • 专利详细信息:   CN104532206-A 22 Apr 2015 C23C-016/26 201552 Pages: 6 Chinese
  • 申请详细信息:   CN104532206-A CN10767130 12 Dec 2014
  • 优先权号:   CN10767130

▎ 摘　　要

NOVELTY - Preparing insulating substrate in situ on graphene doped thin film involves pretreating insulating substrate through metal plating process, where the insulating substrate is coated with a metal catalyst. The catalyst layer is formed on the insulating substrate. USE - Method for preparing insulating substrate in situ on graphene doped thin film (claimed) for transparent electrode.