▎ 摘　　要

NOVELTY - The electronic device (100) has a substrate (105) and an insulator (110) overlaying the substrate. A local first gate (115) is embedded in the insulator with a top surface of the local first gate being substantially coplanar with a surface of the insulator. A second dielectric layer (135) is formed over a bilayer graphene layer (130) that is formed on a first dielectric layer (120) over the local first gate. A local second gate (140) is formed over the second dielectric layer. The local first and second gates form gates to locally control a first portion of the bilayer graphene layer. USE - Electronic device e.g. graphene based electronic device, such as FET. ADVANTAGE - Provides techniques for forming bilayer graphene layer device utilizing the advantageous properties of graphene, that includes a patterned top and bottom gates to bias different voltages on different devices on the same wafer to different band gap or threshold voltage depending on the device and/or circuit requirement. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an integrated circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an electronic device. Electronic device (100) Substrate (105) Insulator (110) Local first gate (115) First dielectric layer (120) Bilayer graphene layer (130) Second dielectric layer (135) A local second gate (140)