▎ 摘　　要

NOVELTY - The manufacturing method involves forming an electron trapping center in a graphene quantum dot array, which is formed in a graphene monolayer (220). A bandgap is created in the bandstructure of the graphene quantum dot array by patterning any one of the graphene nanoribbon or nanomesh structure in the graphene monolayer. USE - Method of manufacturing monolayer graphene photodetector (claimed) e.g. FET-based photodetector. ADVANTAGE - Photoresponsivity of pure graphene photodetector is improved by increasing absorption efficiency of graphene. Operation speed and temperature performance are improved through bandstructure engineering of graphene, while maintaining high responsivity of photodetector. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a monolayer graphene photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows the isometric view of the FET-based photodetector during manufacture. FET-based photodetector (200) Graphene monolayer (220)