▎ 摘　　要

NOVELTY - The device has a first electrode located on a high blocking gain semiconductor substrate that is formed with a graphene layer. A second electrode is connected with the first electrode. A light energy of a light source i.e. UV light source/visible light source is greater than a band gap of the high blocking gain semiconductor substrate. The high blocking gain semiconductor substrate is selected as a high-resistance organic semiconductor and a high resistance inorganic semiconductor. The first electrode and the second electrode are selected as a metal electrode. USE - Light source irradiate photovoltaic device. ADVANTAGE - The device has high photoelectric conversion efficiency. DETAILED DESCRIPTION - The high blocking gain semiconductor substrate is silicon carbon, Gallium phosphide and Gallium arsenide materials. An INDEPENDENT CLAIM is also included for a method for producing photovoltaic effect of a light source irradiate photovoltaic device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a light source irradiate photovoltaic device.