• 专利标题:   Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.
  • 专利号:   US2021375619-A1, KR2021147179-A, KR2434399-B1, US11508576-B2
  • 发明人:   KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H
  • 专利权人:   UNIV AJOU IND ACAD COOP FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV AJOU IND ACAD COOP FOUND
  • 国际专利分类:   H01L029/267, H01L021/02, C30B025/10, C01B032/186, C01B032/194, C01G039/06, C30B025/16, C30B025/18, C30B029/10, C30B029/46
  • 专利详细信息:   US2021375619-A1 02 Dec 2021 H01L-021/02 202202 English
  • 申请详细信息:   US2021375619-A1 US329394 25 May 2021
  • 优先权号:   KR063984

▎ 摘  要

NOVELTY - The method involves transferring a graphene onto a flexible substrate. A transition metal layer is deposited on the flexible substrate onto which the graphene is transferred. A gas containing plasma-treated sulfur, is injected onto the flexible substrate on which the transition metal layer is deposited. USE - Method for producing transition metal dichalcogenide-graphene heterojunction composite of flexible element (all claimed). ADVANTAGE - The method enables to produce transition metal dichalcogenide-graphene heterojunction composite that has excellent electrical performance and catalytic performance.