• 专利标题:   Thermoelectric structure for forming thermoelectric device for thermoelectric apparatus, comprises graphene layer, and thermoelectric component comprising thermoelectric film and quantum dot on thermoelectric film, on graphene layer.
  • 专利号:   US2014373891-A1, KR2015000365-A
  • 发明人:   LEE K, KIM S, HWANG S, LEE S, LEE Y, HWANG S W, KIM S I, KIM S W, LEE K H, LEE S M, LEE Y H
  • 专利权人:   LEE K, KIM S, HWANG S, LEE S, LEE Y, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   H01L035/16, H01L035/22, H01L035/32, H01L035/02, H01L035/18
  • 专利详细信息:   US2014373891-A1 25 Dec 2014 H01L-035/32 201502 Pages: 10 English
  • 申请详细信息:   US2014373891-A1 US306705 17 Jun 2014
  • 优先权号:   KR072717

▎ 摘  要

NOVELTY - A thermoelectric structure comprises a graphene layer (21), and a thermoelectric component arranged on the graphene layer. The thermoelectric component comprises a thermoelectric film (22), and quantum dots (23,23a,23b,23c) arranged on the thermoelectric film. USE - Thermoelectric structure is used for forming thermoelectric device for thermoelectric apparatus (all claimed). ADVANTAGE - The thermoelectric structure has high Seebeck coefficient and electroconductivity, and low thermal-conductivity. The thermoelectric device obtained using thermoelectric structure has high ZT coefficient and energy conversion efficiency. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) thermoelectric device; and (2) thermoelectric apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of thermoelectric structure. Lower structure (20) Graphene layer (21) Thermoelectric film (22) Layers (22a,22b,22c,22d) Quantum dots (23,23a,23b,23c)