▎ 摘　　要

NOVELTY - The structure has a graphene strip whose conductive channel and a gate electrode are filled with a dielectric material to form a symmetrical channel structure, where the channel is made of manganese metal. A source region and a drain expansion region are formed with N-type heavily doped part. The graphite strip is arranged close to the source region. A doped part is arranged close to the channel and lightly doped. A device drain region is arranged non-symmetrical to the source region. USE - Non-symmetrical peak lightly doped drain structure for a graphene nano-strip FET. ADVANTAGE - The structure avoids three-dimensional Poisson and terpene making Lippmann Schwinger equation to construct the non-uniformly doped graphene FET. The structure calculates non-symmetric doping strategy of the graphene nano strip, electrical characteristics, output characteristic, transfer characteristic, switching current ratio, sub-threshold swing amplitude, threshold value voltage drift and contrast analysis, reduces switch current ratio and leakage current, ensures better gate control ability and effectively restrains short channel effect and hot carrier effect. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a non-symmetrical peak lightly doped drain structure.