• 专利标题:   Method for preparing graphene double-heterojunction, involves selecting substrate material, growing 3C-silicon carbide epitaxial layer on surface of substrate material, followed by pyrolyzing resultant layer for forming graphene layer.
  • 专利号:   CN107845567-A
  • 发明人:   XIN B, WANG X, YANG W, LIU W, XIA J
  • 专利权人:   UNIV CHONGQING ARTS SCI
  • 国际专利分类:   H01L021/02, H01L029/165
  • 专利详细信息:   CN107845567-A 27 Mar 2018 H01L-021/02 201830 Pages: 10 Chinese
  • 申请详细信息:   CN107845567-A CN10876844 25 Sep 2017
  • 优先权号:   CN10876844

▎ 摘  要

NOVELTY - A graphene double-heterojunction preparing method involves selecting a substrate material and growing a 3C-silicon carbide epitaxial layer on the surface of the substrate material. The resultant layer is pyrolyzed for forming a graphene layer to obtain the finished product. USE - Method for preparing a graphene double-heterojunction. ADVANTAGE - The method enables preparing the graphene double-heterojunction with large energy band difference and better lattice match, in a cost effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene double-heterojunction.