• 专利标题:   Heterojunction photoelectric detector useful for detecting ultraviolet radiation in sun-blind area, comprises single layer graphene set between silicon carbide and gallium oxide and connected with two electrodes.
  • 专利号:   CN113517366-A, CN113517366-B
  • 发明人:   HE Y, YUAN H, WANG Y, GUO H, LAN Z, HU Y
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   H01L031/18, H01L031/109, H01L031/0336
  • 专利详细信息:   CN113517366-A 19 Oct 2021 H01L-031/0336 202207 Chinese
  • 申请详细信息:   CN113517366-A CN10550031 20 May 2021
  • 优先权号:   CN10550031

▎ 摘  要

NOVELTY - Heterojunction photoelectric detector comprises silicon carbide, single-layer graphene, gallium oxide and electrode. The single layer graphene is set between the silicon carbide and the gallium oxide and connected with two electrodes. USE - The heterojunction photoelectric detector is useful for detecting ultraviolet sun blind area under complex infrared and visible light background interference and in national defence, ultraviolet astronomy, and ultraviolet light communication technology. ADVANTAGE - The heterojunction photoelectric detector has high response speed, high mobility, high light-dark current ratio, popularization and application value. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing heterojunction photoelectric detector.