▎ 摘　　要

NOVELTY - The device has a silicon substrate layer whose upper side is arranged with a graphene layer. An upper side of the graphene layer is fixed with a superconducting thin film layer. A titanium film layer is arranged on the graphene layer and the superconducting thin film layer. Two sides of the superconducting thin film layer are arranged with a phonon superconducting thin film layer and an electronic superconductive film layer. The superconducting thin film layer is made of silver or palladium material. The electronic superconducting thin film layer is made of titanium material. USE - Graphene TES superconducting device. ADVANTAGE - The device is simple to manufacture, and compatible use and can utilize a two-dimensional high heat radiation rate graphene material as phonon coupling material so as to improve thermal coupling coefficient, thus effectively reducing recovering time of a TES device and improving response speed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene TES superconducting device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene TES superconducting device manufacturing method. '(Drawing includes non-English language text)'