▎ 摘　　要

NOVELTY - The device has a control unit for measuring an electrical response of the device from an ambipolar two-dimensional material (22). A photoactive semiconducting material (21) and the two-dimensional material are configured such that a non-screening gate voltage interval is provided in which an interface voltage at a junction between the photoactive semiconducting layer and the two-dimensional material is changed by applying the gate voltage to a gate electrode (241) which falls within a non-screening gate voltage interval, where the non-screening gate voltage interval comprises a flat-band gate voltage at which an interface voltage is zero, a depletion gate voltage range in which the interface voltage is nonzero and a charge-neutrality gate voltage at which the two-dimensional material is at a charge-neutrality point and the depletion gate voltage range and the charge-neutrality gate voltage lie on a same side of the flat-band gate voltage on a gate voltage axis. USE - Graphene-based voltage-mode photosensitive device i.e. photosensitive FET (claimed). ADVANTAGE - The device allows a shutter mode and a capture mode to be operated when a dark current curve of an ambipolar material curve coincides with an interface voltage curve in such a manner that the charge neutrality point lies between a flat-band gate voltage at which the interface voltage is zero and a threshold gate voltage at which the interface voltage exhibits a local maximum. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for using a photosensitive device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a photosensitive device. Photoactive semiconducting material (21) Ambipolar two-dimensional material (22) Gate insulator (23) Underlying substrate (25) Gate electrode (241)