▎ 摘　　要

NOVELTY - Preparing hexagonal graphene nano structure comprises e.g. taking the copper foil as graphene growth substrate, placing the copper foil in quartz tube type furnace, filling inert gas continuously at a flow rate of 280-320 sccm, maintaining the temperature of the tubular furnace is 1040-1100 degrees C, when the tubular furnace heating to the set temperature, keeping temperature constant, flowing the hydrogen 45-55 sccm, annealing for 2.5-3.5 hours, under the atmosphere of inert gas and hydrogen so that the copper foil surface generates copper oxide nano particle, after annealing. USE - The method is useful for preparing hexagonal graphene nano structure (claimed). ADVANTAGE - The method has simple preparation process. The graphene nano structure has special structure design providing important instructive idea. DETAILED DESCRIPTION - Preparing hexagonal graphene nano structure comprises (i) taking the copper foil as graphene growth substrate, placing the copper foil in quartz tube type furnace, filling inert gas continuously at a flow rate of 280-320 sccm, maintaining the temperature of the tubular furnace is 1040-1100 degrees C, when the tubular furnace heating to the set temperature, keeping temperature constant, flowing the hydrogen 45-55 sccm, annealing for 2.5-3.5 hours, under the atmosphere of inert gas and hydrogen so that the copper foil surface generates copper oxide nano particle, (ii) after annealing, keeping the temperature of the tubular furnace at 1040-1100 degrees C, and under the temperature condition, stopping introducing inert gas to copper foil is the copper oxide nano-particle nucleation, flowing 0.4-0.6 sccm inject gas carbon source, adjusting the hydrogen flow rate to 95-105 sccm, the carbon source under the action of high temperature cracking, growing the graphene on the surface of the copper foil under the catalysis of copper foil, maintaining the system condition and for graphene growth 30-60 minutes, (iii) after finishing growth, copper oxide nano-particle as etching point, flow quantity of keeping gas carbon source is 0.4-0.6 sccm, adjusting the flow rate of the hydrogen gas to 2.5-3.5 sccm, etching for 60-120 minutes, (iv) after etching, and then the copper oxide nano-particles are growing, keeping the flow quantity of gas carbon source is 0.4-0.6 sccm, adjusting the flow rate of the hydrogen gas to 95-105 sccm, graphene grown 10-20 minutes, (v) finishing the growth and then copper oxide nano-particle as etching point, keeping the gas carbon source flow quantity is 0.4-0.6 sccm, adjusting the flow rate of hydrogen to 2.5-3.5 sccm, etching 5-15 minutes, (vi) after etching, stopping introducing gas carbon source, cooling the tubular furnace in the process continue to flow the inert gas of 280-320 sccm, introducing hydrogen at a flow rate of 3-5 sccm, reducing the tubular furnace to the room temperature to obtain the growth with a bicyclic structure of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation hexagonal graphene nano structure.